RHRP8120 8 a, 1200 v, hyperfast diode the RHRP8120 is a hyperfast diode with soft recovery characteristics. it has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. these devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. symbol features ? hyperfast recovery t rr = 70 ns (@ i f = 8 a) ? max forward voltage, v f = 3.2 v (@ t c = 25c) ? 1200 v reverse voltage and high reliability ? avalanche energy rated ? rohs compliant applications switching power supplies power switching circuits general purpose packaging jedec to-220ac ordering information part number packa ge brand RHRP8120 to-220ac RHRP8120 note: when ordering, use the entire part number. k a cathode anode cathode (flange) absolute maximum ratings t c = 25 o c, unless otherwise speci?d RHRP8120 unit peak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 1200 v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rwm 1200 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 1200 v average recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i f(av) (t c = 140 o c) 8a repetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i frm (square wave, 20 khz) 16 a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i fsm (halfwave, 1 phase, 60 hz) 100 a maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 75 w avalanche energy (see figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e avl 20 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j -65 to 175 o c data sheet march 2001 www.fairchildsemi.com 1 ?2001 fairchild semiconductor corporation rhr8120 rev. b
electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition min typ max unit v f - - 3.2 v - - 2.6 v i r - - 100 a - - 500 a t rr - - 5 5 n s - - 7 0 n s t a - 30 - ns t b - 20 - ns q rr - 165 - nc c j i f = 8 a i f = 8 a, t c = 150 o c v r = 1200 v v r = 1200 v, t c = 150 o c i f = 1 a, di f /dt = 200 a/ s i f = 8 a, di f /dt = 200 a/ s i f = 8 a, di f /dt = 200 a/ s i f = 8 a, di f /dt = 200 a/ s i f = 8 a, di f /dt = 200 a/ s v r = 10 v, i f = 0 a - 25 - pf r jc --2 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (see figure 9), summation of t a + t b . t a = time to reach peak re verse current (see figure 9). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 9). q rr = reverse recovery charge. c j = junction capacitance. r jc = thermal resistance junction to case. pw = pulse width. d = duty cycle. typical performance cur ves figure 1. forward current vs for w ard voltage figure 2. reverse current vs reverse voltage v f , forward voltage (v) i f, forward current (a) 1 40 0.5 10 0123 5 4 25 o c 100 o c 175 o c v r , reverse voltage (v) 0 400 800 1200 600 1000 500 0.01 0.1 1 10 i r , reverse current ( a) 200 0.001 25 o c 100 o c 175 o c 100 RHRP8120 www.fairchildsemi.com 2 ?2001 fairchild semiconductor corporation rh r8120 rev. b
figure 3. t rr , t a and t b curves vs for w ard current figure 4. t rr , t a and t b curves vs for w ard current figure 5. t rr , t a and t b curves vs for w ard current figure 6. current derating curve figure 7. junction capacitance vs reverse voltage typical p erf ormance curves (continued) i f , forward current (a) 0.5 0 40 10 8 1 20 30 t, recovery times (ns) 4 t b 50 t rr t a 60 t c = 25 o c, di f /dt = 200a/ s 20 40 60 t, recovery times (ns) i f , forward current (a) 0.5 0 8 14 80 t a t rr 100 t b t c = 100 o c, di f /dt = 200a/ s 100 80 60 t, recovery times (ns) i f , forward current (a) 0.5 0 8 14 t a 40 120 t rr t b 20 t c = 175 o c, di f /dt = 200a/ s 10 2 0 100 115 145 175 160 4 6 8 130 dc sq. wave i f(av) , average forward current (a) t c , case temperature ( o c) v r , reverse voltage (v) 20 100 0 40 0 50 100 150 200 80 60 c j , junction capacitance (pf) RHRP8120 www.fairchildsemi.com 3 ?2001 fairchild semiconductor corporation rh r8120 rev. b
test cir cuits and waveforms figure 8. t rr test circuit figure 9. t rr w a veforms and definitions figure 10. avalanche energy test circuit figure 11. avalanche current and voltage waveforms r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i max = 1a l = 40mh iv t 0 t 1 t 2 i l v avl t i l RHRP8120 www.fairchildsemi.com 4 ?2001 fairchild semiconductor corporation rhr8120 rev. b
www.fairchildsemi.com 5 ?2001 fairchild semiconductor corporation rhr8120 rev. b
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